pnp tip42-a-b-c 04/10/2012 comset semiconductors 1 | 4 semiconductors silicon power transistors they are epitaxial-base pnp power transistors mounted in jedec to-220 plastic package. they are intended for use in medium pow er linear and switching applications. npn complements are tip41-a-b-c compliance to rohs. absolute maximum ratings symbol ratings value unit v cbo collector-base voltage tip42 -40 v tip42a -60 tip42b -80 TIP42C -100 v ceo collector-emitter voltage tip42 -40 v tip42a -60 tip42b -80 TIP42C -100 v ebo emitter-base voltage tip42 -5 v tip42a tip42b TIP42C i c collector current tip42 -6 a tip42a tip42b TIP42C i cm collector peak current tip42 -10 a tip42a tip42b TIP42C
pnp tip42-a-b-c 04/10/2012 comset semiconductors 2 | 4 semiconductors absolute maximum ratings symbol ratings value unit i b base current tip42 -2 a tip42a tip42b TIP42C p c power dissipation @ t c < 25 tip42 65 watts tip42a tip42b TIP42C @ t a < 25 tip42 2 tip42a tip42b TIP42C t j junction temperature tip42 150 c tip42a tip42b TIP42C t s storage temperature range tip42 -65 to +150 tip42a tip42b TIP42C thermal characteristics symbol ratings value unit r thj-mb from junction to mounting base tip42 1.92 c/w tip42a tip42b TIP42C r thj-a from junction to ambient in free air tip42 62.5 c/w tip42a tip42b TIP42C
pnp tip42-a-b-c 04/10/2012 comset semiconductors 3 | 4 semiconductors electrical characteristics tc=25c unless otherwise noted symbol ratings test condition(s) min typ mx unit i ces collector cutoff current i e = 0, v ce = -v ceo tip42 - - -0.4 ma tip42a tip42b TIP42C i ceo collector cutoff current i b = 0, v ce = -30v tip42 - - -0.7 ma tip42a i b = 0, v ce = -60v tip42b - - -0.7 TIP42C i ebo emitter cutoff current v eb = -5 v, i c = 0 tip42 - - -1 ma tip42a tip42b TIP42C v ceo collector-emitter breakdown voltage (*) i c = -30 ma, i b = 0 tip42 -40 - - v tip42a -60 - - tip42b -80 - - TIP42C -100 - - v ce(sat) collector-emitter saturation voltage (*) i c = -6 a, i b = -600 ma tip42 - - -1.5 v tip42a tip42b TIP42C v be(on) base-emitter voltage (*) i c = -6 a, v ce = -4 v tip42 - - -2 v tip42a tip42b TIP42C h fe dc current gain (*) v ce = -4 v, i c = -0.3 a tip42 30 - - - tip42a tip42b TIP42C v ce = -4 v, i c = -3 a tip42 15 - 75 tip42a tip42b TIP42C h fe small signal current gain v ce = -10 v, i c = - 0.5 a, f= 1khz tip42 20 - - - tip42a tip42b TIP42C f t current gain-bandwidth product v ce = -10 v, i c = - 0.5 a tip42 3 - - mhz tip42a tip42b TIP42C (*) pulse width 300 s, duty cycle 2.0%
pnp tip42-a-b-c 04/10/2012 comset semiconductors 4 | 4 semiconductors mechanical data case to-220 dimensions (mm) min. max. a 9,90 10,30 b 15,65 15,90 c 13,20 13,40 d 6,45 6,65 e 4,30 4,50 f 2,70 3,15 g 2,60 3,00 h 15,75 17.15 l 1,15 1,40 m 3,50 3,70 n - 1,37 p 0,46 0,55 r 2,50 2,70 s 4,98 5,08 t 2.49 2.54 u 0,70 0,90 september 2012 ????????? ? information furnished is believed to be accurate and reliable. ho wever, comset semiconductors assumes no responsibility for the consequences of use of such information nor for any infringement of patents or ot her rights of third parties which may results from its use. da ta are subject to change without notice. co mset semiconductors makes no warranty, representation or guarantee re garding the suitability of its products for any particular purpose, nor does comset semicond uctors assume any liability aris ing out of the application or us e of any product and specifica lly disclaims any and all liability, including without limitation consequential or in cidental damages. comset semiconductors? products are not au thorized for use as critical components in life support devices or systems. ? ? www.comsetsemi.com info@comsetsemi.com pin 1 : base pin 2 : collector pin 3 : emitter case : collector
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